Invited Speakers

ASDAM 2026 will welcome distinguished invited speakers from leading universities, research institutes, and industry, presenting the latest advances in semiconductor devices, materials, electronics, and related technologies.

Manabu Arai

Nagoya University

Invited Talk

High power GaN-based HEMTs

Joel Tacla Asubar

University of Fukui

Invited Talk

Overcoming the Mobility-Threshold Voltage Trade-Off in Normally-Off AlGaN/GaN MIS-HEMTs via Shallow Recess and Oxygen Plasma Interface Engineering

Oliver Hilt

FBH Berlin

Invited Talk

Gallium oxide-based high-voltage transistors towards power switching – and other UWBG device competitors rising at the horizon

Michaela Sojková

IEE SAS

Invited Talk

Towards Scalable TMD Electronics: Fabrication Strategies and Device Challenges

Konrad Szaciłowski

AGH University of Krakow

Invited Talk

Coordination compounds as a playground for neuromorphic computing

Roberto Fornari

University of Parma

Invited Talk

Hetero-epitaxial growth and properties of different gallium oxide polymorphs

Jan Kuzmík

IEE SAS

Invited Talk

Vertical GaN transistor with semi-insulating channel

Aurelien Gauthier-Brun

imec

Invited Talk

GaN power platform for applications up to 100V

Mattia Capriotti

Infineon

Invited Talk

GaN MBDS for different power converter topologies

Po-Hsueh Chang

Lunghwa University

Invited Talk

BioMEMS and biomedical semiconductor electronics