Invited Speakers
ASDAM 2026 will welcome distinguished invited speakers from leading universities, research institutes, and industry, presenting the latest advances in semiconductor devices, materials, electronics, and related technologies.
Manabu Arai
Nagoya University
High power GaN-based HEMTs
Joel Tacla Asubar
University of Fukui
Overcoming the Mobility-Threshold Voltage Trade-Off in Normally-Off AlGaN/GaN MIS-HEMTs via Shallow Recess and Oxygen Plasma Interface Engineering
Oliver Hilt
FBH Berlin
Gallium oxide-based high-voltage transistors towards power switching – and other UWBG device competitors rising at the horizon
Michaela Sojková
IEE SAS
Towards Scalable TMD Electronics: Fabrication Strategies and Device Challenges
Konrad Szaciłowski
AGH University of Krakow
Coordination compounds as a playground for neuromorphic computing
Roberto Fornari
University of Parma
Hetero-epitaxial growth and properties of different gallium oxide polymorphs
Jan Kuzmík
IEE SAS
Vertical GaN transistor with semi-insulating channel
Aurelien Gauthier-Brun
imec
GaN power platform for applications up to 100V
Mattia Capriotti
Infineon
GaN MBDS for different power converter topologies
Po-Hsueh Chang
Lunghwa University
BioMEMS and biomedical semiconductor electronics
Conference Deadlines
Keep track of the key milestones for abstract submission, paper submission, and registration for ASDAM 2026.
| Date | Milestone |
|---|---|
| 1 April 2026 | Start of abstract submission |
| 1 June 2026 | Abstract submission deadline |
| 30 June 2026 | Abstract confirmation notification |
| 14 August 2026 | Full paper submission deadline |
| Up to 14 August 2026 | Early registration |
| From 15 August 2026 | Late registration |
Scope of the Conference
ASDAM 2026 focuses on advanced semiconductor devices, microsystems, materials, and related technologies, bringing together experts from academia and industry across a broad spectrum of research areas.
Materials and Technologies
- Wide-bandgap (WBG) and ultra-wide-bandgap (UWBG) materials
- Semiconductor and dielectric materials
- 2D materials and nanostructures
- Organic electronics
Structures and Devices
- WBG and UWBG planar, vertical, and heterostructure devices
- III-V semiconductors, nitrides, oxides, carbides, diamond, and related materials
- Power and microwave electronic devices and systems
- Quantum heterostructure devices
- Neuromorphic devices
- Packaging technologies
Characterization, Modelling and Simulation
- 2D and 3D process, structure, and device simulation
- Multiphysics simulations
- Structural, optical, electrical, and defect characterization
- Reliability evaluation and modelling
Sensors and Microsystems
- Design and fabrication
- Surface and bulk micromachining
- MEMS and NEMS structures and devices
- Smart sensors
Photonics
- Lasers and photodetectors
- Waveguides, gratings, and splitters
- Quantum sensing and computing
Related Topics
- Advanced energy storage materials and devices
- Advances in IC design
- Microelectronics applications in electronic systems
- Neural networks and artificial intelligence in electronics
Email: asdam@skchips.sk
Address: FEI STU, Ilkovičova 3, 841 04 Bratislava